METHOD OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to prevent deformation of gate patterns of a memory cell due to an insulation layer filled between gate patterns of the memory cell in an impurity injection mask removing process and a following cleaning process. CONSTITUTION: Cell gates(CG) are formed on the upper side of a cell area by patterning a laminate structure for a gate pattern on the cell area. A first impurity injection area(101a) is formed on the cell area of the semiconductor substrate exposed in both sides of the cell gates. An insulation layer(133) is filled between the cell gates. Selection gates are formed on the upper side of the selection transistor area and driving gates are formed on the upper side of the peripheral area by patterning the laminate structure for a gate pattern on a selection transistor area and a peripheral area. A second impurity injection area is formed on the selection transistor area of the semiconductor substrate exposed between the selection gates. A third impurity injection area is formed on the peripheral area of the semiconductor substrate exposed in both sides of the driving gate.