| 摘要 |
PURPOSE: A switching gate drive is provided to control the spike voltage of the collector-emitter voltage of an insulated gate bipolar transistor device by varying gate resistance according to the collector-emitter voltage. CONSTITUTION: A gate driver comprises a toe temple circuit(20), a IGBT(Insulated Gate Bipolar Transistor) operating power source part(30), a voltage inspection part(40), and a resistive part(50). The toe temple circuit offers an IGBT operating signal which is offered from a gate driver driving chip(10) to a variable resistance part. An IGBT operating power source establishes proposal level of IGBT inspection voltage by offering IGBT driving voltage which is set. The voltage inspection part offers an IGBT gate resistance variable signal by receiving the IGBT inspection voltage which is offered from an IGBT device(60). The resistive part comprises a fixation resistance part(52) and a variable resistance part(51).
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