| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for inspecting a defect in a semiconductor single crystal, which is capable of observing and inspecting a harmful minute crystal defect securely, without generating defects such as color change in a surface of an inspection target like a semiconductor single-crystal wafer. <P>SOLUTION: A single-crystal inspection target 4 is immersed in inspecting liquid 5 which is hydrocarbon liquid, or alcohol-based liquid, or ketone-based liquid, and an ultrasonic wave 6 having a wavelength of 60 μm or under, or having frequency of 78 MHz or more in the inspection target 4 is made incident on the inspection target 4, to inspect presence or absence of a crystal defect 7 in the inspection target 4 based on the ultrasonic wave 6 reflected in the inspection target 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
