发明名称 MULTI-BIT-PER-CELL FLASH MEMORY DEVICE WITH NON-BIJECTIVE MAPPING
摘要 To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to provide a read state value that is transformed into a plurality of output bits, for example by maximum likelihood decoding or by mapping the read state value into a plurality of soft bits and then decoding the soft bits.
申请公布号 US2011276749(A1) 申请公布日期 2011.11.10
申请号 US201113175859 申请日期 2011.07.03
申请人 RAMOT AT TEL AVIV UNIVERSITY LTD. 发明人 LITSYN SIMON;SHARON ERAN;ALROD IDAN
分类号 G06F12/02 主分类号 G06F12/02
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