| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a good silicon single crystal with twin crystal defects suppressed, in manufacturing a non-defect silicon single crystal by a CZ method. <P>SOLUTION: The silicon single crystal is manufactured by pulling up the silicon single crystal from a silicon melt in a chamber in the CZ method. The method is characterized in that the V/G value, the ratio of a speed V of pulling up the silicon single crystal to a crystal temperature gradient G is controlled so as to be larger by 0.2-0.5% than a V/G value at the boundary between a dislocation cluster region formed as an aggregate of interstitial silicon and a defect-free region dominated by interstitial silicon, and so as to be smaller than a V/G value at which an OSF region appears. <P>COPYRIGHT: (C)2012,JPO&INPIT |
