发明名称 |
METHOD FOR MANUFACTURING SILICON CRYSTAL |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which a high quality silicon crystal can be effectively manufactured. <P>SOLUTION: A method for manufacturing a silicon crystal includes steps of heating and melting a silicon raw material 10 to make a silicon melt 11 before inputting the silicon raw material 10 to an electromagnetic casting furnace (EMC furnace) 20 and inputting the silicon melt 11 to the electromagnetic casting furnace 20. The method is characterized in that the silicon melt 11 is formed by heating the silicon raw material 10 with plasma irradiation 30 and inputting the silicon melt 11 to the electromagnetic casting furnace 20 through a transfer pipe 40 which is capable of controlling the input amount to the furnace by utilizing temperature. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011225405(A) |
申请公布日期 |
2011.11.10 |
申请号 |
JP20100098888 |
申请日期 |
2010.04.22 |
申请人 |
SUMCO CORP |
发明人 |
SUGIMURA WATARU;NISHIMOTO MANABU;FUJIWARA TOSHIYUKI |
分类号 |
C01B33/02;B22D25/04;B22D35/06 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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