发明名称 STANDARD CELL, SEMICONDUCTOR DEVICE HAVING STANDARD CELLS, AND METHOD FOR LAYING OUT AND WIRING THE STANDARD CELL
摘要 The chip area of a semiconductor device having a plurality of standard cells is to be made smaller. A semiconductor device includes first and second standard cells. The first standard cell includes a diffusion region, a functional device region opposed to the diffusion region, and a metal layer. The second standard cell includes another diffusion region continuous with the diffusion region, another functional device region opposed to the other diffusion region, and further another diffusion region formed between the other diffusion region and the other functional device region. The metal layer and the other functional device region are coupled together electrically through the diffusion regions.
申请公布号 US2011272776(A1) 申请公布日期 2011.11.10
申请号 US201113101778 申请日期 2011.05.05
申请人 RENESAS ELECTRONICS CORPORATION 发明人 OMURA HIROSHI
分类号 H01L25/00;G06F17/50 主分类号 H01L25/00
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