发明名称 SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION BEAM GENERATION
摘要 <p>An ion source (200), capable of generating high - density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width (w), which is the dimension along which the beam is extracted, is greater than its height (h). The depth (d) of the source may be defined to maximize energy transfer from the antenna (203) to the plasma. In a further embodiment, a multicusp magnetic field (210, 211, 212) surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.</p>
申请公布号 WO2011139587(A1) 申请公布日期 2011.11.10
申请号 WO2011US33457 申请日期 2011.04.21
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;BILOIU, COSTEL;SCHEUER, JAY;OLSON, JOSEPH;SINCLAIR, FRANK;DISTASO, DANIEL 发明人 BILOIU, COSTEL;SCHEUER, JAY;OLSON, JOSEPH;SINCLAIR, FRANK;DISTASO, DANIEL
分类号 H01J37/08;H01J37/317 主分类号 H01J37/08
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