发明名称 SEMICONDUCTOR LASER
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor laser with high reliability and characteristic reproducibility capable of being manufactured at a low cost in a simple manufacturing process. <P>SOLUTION: The semiconductor laser comprises a refractive index modulation region 18 capable of changing refractive index (or a gain modulation region 31 capable of changing a gain) and a vertical coupling region 19 where a Mach-zehnder coupler is formed in a resonator. The refractive index modulation region is formed at a position that meets "(resonator length L)/(integer of 2 or higher)" from one reflecting mirror end face 9A. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011228384(A) 申请公布日期 2011.11.10
申请号 JP20100094877 申请日期 2010.04.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 GOTODA MITSUNOBU
分类号 H01S5/10 主分类号 H01S5/10
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