发明名称 METHOD OF PRODUCING SILICON CHANNEL MATRIX
摘要 FIELD: machine building. ^ SUBSTANCE: proposed method comprises anode etching of single-crystal p-type silicon with seed holes on surface in solution of electrolytes containing ions of hydrogen and fluorine, stopping opened micro channels by plugs of silicon dioxide nanoparticles to perform low-temperature deposition of porous-silicon film on matrix continuous surface and produce channels from pores of said silicon in entire nanometre range. ^ EFFECT: decreased transverse sizes of channels, expanded range of products, lower costs. ^ 7 cl, 6 dwg
申请公布号 RU2433502(C1) 申请公布日期 2011.11.10
申请号 RU20100128369 申请日期 2010.07.08
申请人 UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK INSTITUT FIZIKI POLUPROVODNIKOV IM. A.V. RZHANOVA SIBIRSKOGO OTDELENIJA RAN (IFP SO RAN) 发明人 ROMANOV SERGEJ IVANOVICH;VANDYSHEVA NATAL'JA VLADIMIROVNA;DANILJUK ALEKSANDR FEDOROVICH;SEMENOVA OL'GA IVANOVNA;KOSOLOBOV SERGEJ SERGEEVICH
分类号 B82B3/00;H01L21/3063 主分类号 B82B3/00
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