发明名称 |
METHOD OF PRODUCING SILICON CHANNEL MATRIX |
摘要 |
FIELD: machine building. ^ SUBSTANCE: proposed method comprises anode etching of single-crystal p-type silicon with seed holes on surface in solution of electrolytes containing ions of hydrogen and fluorine, stopping opened micro channels by plugs of silicon dioxide nanoparticles to perform low-temperature deposition of porous-silicon film on matrix continuous surface and produce channels from pores of said silicon in entire nanometre range. ^ EFFECT: decreased transverse sizes of channels, expanded range of products, lower costs. ^ 7 cl, 6 dwg |
申请公布号 |
RU2433502(C1) |
申请公布日期 |
2011.11.10 |
申请号 |
RU20100128369 |
申请日期 |
2010.07.08 |
申请人 |
UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK INSTITUT FIZIKI POLUPROVODNIKOV IM. A.V. RZHANOVA SIBIRSKOGO OTDELENIJA RAN (IFP SO RAN) |
发明人 |
ROMANOV SERGEJ IVANOVICH;VANDYSHEVA NATAL'JA VLADIMIROVNA;DANILJUK ALEKSANDR FEDOROVICH;SEMENOVA OL'GA IVANOVNA;KOSOLOBOV SERGEJ SERGEEVICH |
分类号 |
B82B3/00;H01L21/3063 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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