METHOD FOR RECLAIMING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING RECLAIMED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a suitable method for reclaiming a semiconductor substrate, a method for manufacturing a reclaimed semiconductor substrate using a suitable method for reclaiming a semiconductor substrate, and a method for manufacturing an SOI substrate using the reclaimed semiconductor substrate.

SOLUTION: A semiconductor substrate having projections including damaged semiconductor region and insulating layer at the peripheries of the semiconductor substrate is reclaimed by performing: an etching treatment for removing an insulating layer; an etching treatment for removing the damaged semiconductor region in preference to an undamaged semiconductor region using a mixture containing a substance oxidizing a semiconductor material forming the semiconductor substrate, a substance dissolving the oxidized semiconductor material, and a substance controlling the speed of oxidizing the semiconductor material and the speed of dissolving the oxidized semiconductor material; and a laser beam irradiation step.

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