发明名称 ERASE PROCESS FOR USE IN SEMICONDUCTOR MEMORY DEVICE
摘要 A method of erasing memory cells of a memory device includes programming memory cells if the erasing procedure is suspended. The erasing procedure can include pre-programming, erasing, and soft-programming of memory cells in a selected memory unit. If a suspend command is received, for example to allow for a read operation of memory cells of another unit of memory, the erasing procedure stops the pre-programming, erasing, or soft-programming, and proceeds with programming one or more memory cells of the memory unit that was being erased.
申请公布号 US2011273936(A1) 申请公布日期 2011.11.10
申请号 US20100773503 申请日期 2010.05.04
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 YU CHUAN-YING;HUNG CHUN-HSIUNG;CHEN KEN-HUI
分类号 G11C16/16;G11C16/04 主分类号 G11C16/16
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