| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light-emitting efficiency of a group-III nitride semiconductor light-emitting element without increasing the driving voltage. <P>SOLUTION: Each layer of a group-III nitride semiconductor light-emitting element is made of a group-III nitride semiconductor, and the group-III nitride semiconductor light-emitting element includes at least an n-type-layer-side cladding layer 103, a light-emitting layer 104, and a p-type-layer-side cladding layer 106. The n-type-layer-side cladding layer 103 is a superlattice layer having a periodic structure of In<SB POS="POST">y</SB>Ga<SB POS="POST">1-y</SB>N (0<y<1) layer 131, Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N (0<x<1) layer 132 and a GaN layer 133. A thickness of the Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N (0<x<1) layer 132 is within a range that allows electrons to tunnel and holes to be trapped therein. <P>COPYRIGHT: (C)2012,JPO&INPIT |
