发明名称 PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing device that can suppress occurrence of thermal breaking of a conductor. <P>SOLUTION: A plasma processing device has a sealable chamber in which reactive gas is introduced, a discharging unit that has a cathode electrode and an anode electrode disposed so as to face each other in the chamber and generates plasma discharge between the cathode electrode and the anode electrode, a power source for supplying power to the cathode electrode, a conductor for electrically connecting the power source and the cathode electrode, and an air cooling means for cooling the conductor. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011228133(A) 申请公布日期 2011.11.10
申请号 JP20100097119 申请日期 2010.04.20
申请人 SHARP CORP 发明人 YOKOGAWA MASAHIRO;MURAKAMI KOJI;HOTEIDA NOBUYUKI
分类号 H05H1/46;C23C16/509;H01L21/205;H01L21/3065 主分类号 H05H1/46
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