| 摘要 |
PURPOSE: An ion sensing element using a horizontal bipolar junction transistor with double gate is provided to adjust an operating point by gate voltage, and by base current in a state the voltage of an emitter is fixed. CONSTITUTION: An ion sensing element using a horizontal bipolar junction transistor with double gate comprises a reference electrode, a sensing unit, and a horizontal bipolar transistor. The sensing unit makes contact with ion solution and senses hydrogen ion. The horizontal bipolar transistor comprises a sensing gate and a secondary gate. The sensing gate makes contact with a side collector, a base, an emitter, and aqueous solution. The secondary gate doe not make contact with the side collector, the base, the emitter and the aqueous solution. The horizontal bipolar transistor surrounds the emitter with the gate and the side collector.
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