| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily set an ion implantation condition by evaluating energy in desired range projection or bonding depth by LSS theory. <P>SOLUTION: An ion implantation condition setting method for setting an ion implantation condition for simulating an ion implantation distribution by a computer is realized by performing a parameter selection procedure for permitting a user to select a desired distribution parameter Y related to the ion implantation distribution, a value setting procedure for permitting the user to set a value of the desired distribution parameter Y and an ion implantation condition setting procedure for setting the ion implantation condition in accordance with a value of the desired distribution parameter Y by the computer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
