| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device that can reduces a thickness of a rectifier cell while maintaining a rectification property thereof. <P>SOLUTION: There is provided a nonvolatile memory device that includes: a memory unit having a negative electrode, a memory layer, and a positive electrode; and a rectifier cell connected to the negative electrode or the positive electrode, or internally embedded with the memory unit. The rectifier cell includes: a first semiconductor layer; a second semiconductor layer; and an insulation layer disposed between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are one of a p<SP POS="POST">+</SP>-type semiconductor and an n<SP POS="POST">+</SP>-type semiconductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
