MAGNETRON PLASMA MAGNETIC FIELD GENERATION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a magnetron plasma magnetic field generation apparatus capable of controlling the direction of a magnetic field with respect to a wafer surface (the direction of a magnetic field in the vicinity of an etching surface of a wafer) in order to obtain uniformity of etching.

SOLUTION: A magnetron plasma magnetic field generation apparatus including a dipole ring magnet in which a plurality of pole-like segment magnets are disposed in a ring shape further includes magnetic field direction control means for controlling the magnetic field direction of the dipole ring magnet. The magnetic field direction control means is e.g., a disk-like magnet. The magnet is magnetized to have two poles on its principal surfaces, respectively. Each principal surface is disposed to be located within a surface perpendicular to a center axis of the dipole ring magnet, and the disk-like magnet is placed in the vicinity of an upper end of the dipole ring magnet.

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