发明名称 |
OXIDE NITRIDE STACK FOR BACKSIDE REFLECTOR OF SOLAR CELL |
摘要 |
Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1×1011 Coulombs/cm2 on a rear surface of a p-type doped region formed in a substrate comprising semiconductor material, the rear surface opposite a light receiving surface of the substrate and forming a silicon nitride sub-layer on the silicon oxide sub-layer. Embodiments of the invention also include a solar cell device that may be manufactured according methods disclosed herein.
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申请公布号 |
US2011272008(A1) |
申请公布日期 |
2011.11.10 |
申请号 |
US201113101871 |
申请日期 |
2011.05.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MUNGEKAR HEMANT P.;AGRAWAL MUKUL;STEWART MICHAEL P.;WEIDMAN TIMOTHY W.;MISHRA ROHIT;PAAK SUNHOM |
分类号 |
H01L31/02;B82Y40/00;B82Y99/00;H01L31/18 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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