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发明名称
Power Factor Correction Circuit
摘要
A power factor correction circuit has a semiconductor integrated circuit and at least one very low Rds(on) MOSFET. The circuit also includes a silicon carbide diode for zero reverse recovery current.
申请公布号
US2011273118(A1)
申请公布日期
2011.11.10
申请号
US20100777197
申请日期
2010.05.10
申请人
BONNER DAVID;XU AIDONG
发明人
BONNER DAVID;XU AIDONG
分类号
G05F1/70;H02P27/00
主分类号
G05F1/70
代理机构
代理人
主权项
地址
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