MASK BLANK, TRANSFER MASK, METHODS FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a mask blank, a transfer mask and other components with excellent chemical resistance and excellent ArF irradiation resistance.

SOLUTION: A mask blank is used for manufacturing a transfer mask and comprises a light-shielding film 30 on a translucent substrate 1. The light-shielding film 30 is constituted of a material containing tantalum as a main metal component, and a high-oxidized layer 4 with an in-layer oxygen content of 60 at.% or more is formed in the surface layer on a side opposite to a translucent substrate side of the light-shielding film 30.

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