PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To realize a uniform plasma processing (such as etching) within a wafer plane by increasing the uniformity of an incident ion energy distribution function within the wafer plane.

SOLUTION: A plasma processing apparatus has: a setting electrode 4 for setting a wafer 2 thereon with its bias-applying part divided into an inside electrode 4-1 for the center of the wafer 2 and a portion of the wafer in the vicinity thereof, and an outside electrode 4-2 for the outer edge of the wafer and a portion in the vicinity thereof; and power distributors 29-1 and 29-2. In the plasma processing apparatus, a first and a second bias powers 21-1 and 21-2 for accelerating ions to launch at the wafer 2 are each branched in two, and power distributors 29-1 and 29-2 supply the resultant bias powers to the inside and outside electrodes 4-1 and 4-2 while regulating the ratio of the bias power to the inside electrode and that to the outside electrode.

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