| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for easily and properly evaluating occurrence of a defect caused by a contact existing at an edge of a wafer. <P>SOLUTION: A wafer evaluation method comprises: a dry etching step (step S1) in which an affected portion affected by a contact with an external object and a normal portion not affected by a contact with an external object are dry-etched at different dry-etching rate conditions; an end surface observation step (step S3) in which an appearance of an end surface portion of the dry-etched wafer is observed; and an evaluation step (step S4) in which a defect caused by a contact at the end surface portion of the wafer is evaluated on the basis of a wafer observation result. <P>COPYRIGHT: (C)2012,JPO&INPIT |
