发明名称 INFRARED DETECTING SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an infrared ray detecting sensor which eliminates the disadvantages of the existing sensor which is configured so that a micro-bridge of the infrared ray detecting sensor is supported by two beams obliquely extending, the disadvantages being that a sacrifice layer pattern for removing etching needs to be oblique after formation of the micro-bridge, reducing the size of pixels disadvantageously makes the angle of beams steep, and it is very likely that problems, such as a break of infrared ray detecting pattern formed at the beam part, occur when the beams extend at a steep angle, thereby reducing the reliability. <P>SOLUTION: <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011226895(A) 申请公布日期 2011.11.10
申请号 JP20100096362 申请日期 2010.04.19
申请人 NIPPON CERAMIC CO LTD 发明人 MORIGUCHI MASAHIKO
分类号 G01J1/02 主分类号 G01J1/02
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