| 摘要 |
A method for γ- and X-radiation semiconductor detector manufacturing comprises cutting high resistance monocrystal CdZnTe for plates, mechanical glazing, polishing, etching a sample in liquid-phase etchant comprising brome, and contacts deposition via sputtering contact metal using single pulse of technological laser. As a polishing etcher brome-release mixture of nitrate, hydrobromic and tartrat acids; in addition, mechanochemical polishing of semiconductor plate using brome-liberating etchant based on mixture of hydrogen peroxide, hydrobromic acid and ethylene glycol is performed during 2-4 min. |
