THIN FILM TRANSISTOR DEVICE, THIN FILM TRANSISTOR ARRAY DEVICE, ORGANIC EL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DEVICE

摘要

Disclosed is a thin film transistor device which is provided with: a first gate wiring line (21a); a metal wiring line that intersects the first gate wiring line (21a); a second gate wiring line (21b), which is formed, with a thickness larger than that of the first gate wiring line (21a) and with a predetermined width, on the first gate wiring line (21a), by overlapping the first gate wiring line (21a) in a region outside of the region where the first gate wiring line (21a) and the metal wiring line intersect; a gate electrode (41), which extends from the first gate wiring line (21a) to the outside of the region that the second gate wiring line (21b) overlaps; a gate insulating film (140) formed on the gate electrode (41); a semiconductor film (44) formed on the gate insulating film (140); and a metal electrode, which is a metal wiring line portion disposed on the semiconductor film (44). The second gate wiring line (21b) is not formed in the intersection region, and the thickness of the region where the first gate wiring line (21a) intersects the metal wiring line is less than the predetermined width.