发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF |
摘要 |
A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.
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申请公布号 |
US2011272670(A1) |
申请公布日期 |
2011.11.10 |
申请号 |
US201113161543 |
申请日期 |
2011.06.16 |
申请人 |
PANASONIC CORPORATION |
发明人 |
KAWAGUCHI YASUTOSHI;SHIMAMOTO TOSHITAKA;ISHIBASHI AKIHIKO;KIDOGUCHI ISAO;YOKOGAWA TOSHIYA |
分类号 |
H01L33/06;B82Y20/00;H01L21/205;H01L33/32;H01S5/20;H01S5/22;H01S5/30;H01S5/32;H01S5/323;H01S5/343 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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