REFERENCE WAFER FOR CALIBRATION OF DARK-FIELD INSPECTION APPARATUS,METHOD OF MANUFACTURING REFERENCE WAFER FOR CALIBRATION OF DARK-FIELD INSPECTION APPARATUS, METHOD OF CALIBRATING DARK-FIELD INSPECTION APPARATUS, DARK-FIELD INSPECTION APPARATUS, AND A WAFER INSPECTION METHOD

摘要

A technology capable of ensuring measurement results of a dark-field inspection apparatus up to a microscopic area is provided. A dark-field inspection apparatus is calibrated using a bulk wafer as a reference wafer, the bulk wafer having microroughness of an irregular asperity pattern accurately formed on a surface, and the microroughness of the surface having an ensured microroughness degree. The microroughness can be more accurately formed by a chemical treatment with a chemical solution. This microroughness is measured by using an AFM, and an expected haze value is obtained based on the measured value. Then, haze of the surface of the reference wafer is measured by the dark-field inspection apparatus to be inspected to obtain an actually-measured haze value, and a difference between the expected haze value and the actually-measured haze value is obtained. Based on this difference, a haze measurement parameter of the dark-field inspection apparatus is adjusted so that the actually-measured haze value and the expected haze value match each other.