| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-cost sensor capable of improving the sensitivity thereof while suppressing variations in sensor characteristics. <P>SOLUTION: A sensor 1 according to the present invention includes a semiconductor substrate 3, a semiconductor region 5 provided on the semiconductor substrate 3, a source electrode 7 and a drain electrode 9 both provided on the upper side of the semiconductor region 5, and a back gate electrode 11 provided on a rear surface 3b of the semiconductor substrate 3. The semiconductor substrate 3 and the semiconductor region 5 constitute a p-n junction J. A plurality of pores 15 are formed at least on a part 5e of an upper surface 5u of the semiconductor region 5, and the each pores 15 extend from the upper surface 5u of the semiconductor region 5 toward the semiconductor substrate 3 but do not reach the semiconductor substrate 3. At least a part 5e of the upper surface 5u of the semiconductor region 5 and side surfaces 15s of the plurality of pores 15 constitute an open gate 5g. <P>COPYRIGHT: (C)2012,JPO&INPIT |
