| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element with a high MR change rate and a magnetic recording/reproducing device using the element. <P>SOLUTION: The magnetoresistance effect element includes: a laminate including a cap layer, a magnetized fixing layer, a magnetized free layer arranged between the cap layer and the magnetized fixing layer, a tunnel insulating spacer layer arranged between the magnetized fixing layer and the magnetized free layer, and a function layer installed in the magnetized fixing layer, between the magnetized fixing layer and the tunnel insulating spacer layer, between the tunnel insulating spacer layer and the magnetized free layer, in the magnetized free layer or between the magnetized free layer and the cap layer has an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni; and a pair of electrodes for making a current flow vertically to a film face of the laminate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
