| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an HMDS processing apparatus which can hydrophobe a wafer surface stably and easily. <P>SOLUTION: The HMDS processing apparatus comprises an HMDS processing chamber 1 into which HMDS gas is introduced, a hot plate 4 which is installed in the HMDS processing chamber 1 and on which a semiconductor substrate to be processed, i.e. a wafer 5, is mounted, a gas sensor 13 and a gas densitometer 14 which detect the concentration of ammonia gas generated by reaction of the HMDS gas and the wafer 5 in the HMDS processing chamber 1, a valve control unit 15 which controls increase/decrease of output heat from the hot plate 4 depending on the detection values in the gas sensor 13 and the gas densitometer 14, and a hot plate temperature control unit 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
