SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Extension regions (17) are provided in side portions of a fin-shaped semiconductor region (13) formed on a substrate (11). A gate electrode (15) is formed to extend across the fin-shaped semiconductor region (13) and to be adjacent to the extension regions (17). A resistance region (37) having a resistivity higher than that of the extension regions (17) is formed in an upper portion of the fin-shaped semiconductor region (13) adjacent to the gate electrode (15).