| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new manufacturing method for semiconductor devices. <P>SOLUTION: A semiconductor device manufacturing method comprises a step of covering with a polyimide film a semiconductor substrate in which multiple wiring layers including Cu wiring as a lower layer of wiring and a Cu accessory for use in the formation of the Cu wiring, a step of exposing the surface of the top wiring layer of the multiple wiring layers and the surface of the Cu accessory, a step of forming a Cu corrosion-preventive layer over the surface of the top wiring layer and the surface of the Cu accessory by exposing the semiconductor substrate to vapor of a Cu corrosion-preventive agent, a step of selectively removing the Cu corrosion-preventive layer formed over the surface of the top wiring layer, and a step of baking the polyimide film in a state in which the Cu corrosion-preventive layer is formed over the surface of the Cu accessory. <P>COPYRIGHT: (C)2012,JPO&INPIT |
