发明名称 RESIN COMPOSITION FOR ORGANIC THIN-FILM TRANSISTOR INSULATING LAYER, OVERCOAT INSULATING LAYER, AND ORGANIC THIN-FILM TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a resin composition for an organic thin-film transistor insulating layer, by which an organic thin-film transistor which is small in an absolute value of a threshold voltage and small in hysteresis can be manufactured. <P>SOLUTION: The resin composition for the organic thin-film transistor gate insulating layer contains a polymer compound (A) having a repeating unit having a group containing a fluorine atom, and an active hydrogen compound (B) which is a fluorine resin. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011225854(A) 申请公布日期 2011.11.10
申请号 JP20110073795 申请日期 2011.03.30
申请人 SUMITOMO CHEMICAL CO LTD 发明人 YAHAGI AKIRA
分类号 C08G18/80;C08F12/06;C08F16/26;C08F20/36;C08F214/18;C08G18/62;H01L21/28;H01L21/283;H01L21/312;H01L21/336;H01L29/786 主分类号 C08G18/80
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