| 摘要 |
A light emitting device having an electrode structure in which resistance to electrostatic discharge (ESD) is increased, the static electricity is efficiently dispersed and a current concentration phenomenon is prevented, the light emitting device including: a substrate; a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer opposite to the first conductivity type semiconductor layer that are sequentially formed on the substrate; a first conductivity type electrode pad formed on the first conductivity type semiconductor layer; a second conductivity type electrode pad formed on the second conductivity type semiconductor layer; a first auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and having one end connected to the second conductivity type electrode pad and the other end formed in an opposite direction to a direction toward the first conductivity type electrode pad; and a second auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and including a main arm having one end connected to the second conductivity type electrode pad and the other end formed in a direction toward the first conductivity type electrode pad and a plurality of second auxiliary sub-electrodes extending from the other end of the main arm, wherein a direction in which an end of each of the second auxiliary sub-electrodes extends, is not toward the first conductivity electrode pad.
|
