METHOD FOR FABRICATING VERTICAL CHANNEL TYPE NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A vertical channel type nonvolatile memory apparatus and a manufacturing method thereof are provided to reduce the number of crystal grain systems within a poly-silicon channel film, thereby increasing charge mobility in the poly-silicon channel film. CONSTITUTION: A lamination film(201) in which an interlayer insulating film and gate conductive film are alternatively laminated in multiple times is arranged on a substrate. An open region in which the substrate is exposed by selectively etching the lamination film is arranged. A memory film is arranged in a lateral wall of the open region. A poly-silicon film(26) for channels is arranged in order to bury the open region. An anneal process with respect to the poly-silicon film for channels is performed. A poly-silicon channel film(26A) is arranged on the memory film in the lateral wall of the open region by selectively etching the poly-silicon film for channels.