发明名称 Power control circuit and semiconductor memory device using the same
摘要 A semiconductor memory device comprises a power control circuit for outputting a power voltage in a read operation period and a write operation period, and an internal circuit operating by the power voltage supplied thereto.
申请公布号 US8054709(B2) 申请公布日期 2011.11.08
申请号 US20090459345 申请日期 2009.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG TAE JIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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