发明名称 |
Prevention of post CMP defects in CU/FSG process |
摘要 |
A common problem associated with damascene structures made of copper inlaid in FSG (fluorinated silicate glass) is the formation of defects near the top surface of the structure. The present invention avoids this problem by laying down a layer of USG (undoped silicate glass) over the surface of the FSG layer prior to patterning and etching the latter to form the via hole and (for a dual damascene structure) the trench. After over-filling with copper, the structure is planarized using CMP. The USG layer acts both to prevent any fluorine from the FSG layer from reaching the copper and as an end-point detector during CMP. In this way defects that result from copper-fluorine interaction do not form and precise planarization is achieved.
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申请公布号 |
US8053357(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20060463515 |
申请日期 |
2006.08.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHUNG-SHI;SHUE SHAU-LIN |
分类号 |
H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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