发明名称 |
Method of manufacturing a semiconductor device having improved transistor performance |
摘要 |
In one aspect provides a method of manufacturing a semiconductor device having improved transistor performance. In one aspect, this improvement is achieved by conducting a pre-deposition spacer deposition process wherein a temperature of a bottom region of a furnace is higher than a temperature of in the top region and is maintained for a predetermined period. The pre-deposition temperature is changed to a deposition temperature, wherein a temperature of the bottom region is lower than a temperature of the top region.
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申请公布号 |
US8053324(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20070832088 |
申请日期 |
2007.08.01 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SUCHER BRADLEY D.;WHITESELL CHRISTOPHER S.;HUBREGSEN JOSHUA J.;BEATTY JAMES H. |
分类号 |
H01L21/331;C23C16/00 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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