| 摘要 |
In a method of manufacturing a semiconductor device, a first groove and a second groove each having a width less than that of a scribe line are formed along the scribe line in a first protective film provided below a second protective film which protects element forming regions when a wafer is divided into parts by a laser dicing, and the first groove and the second groove are filled with the second protective film. Then, the laser dicing is performed on a region between the first groove and the second groove along the scribe line from the surface where the second protective film is formed to form a cutting groove that reaches at least a predetermined depth of the multi-layer interconnect.
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