| 摘要 |
A manufacturing method for a semiconductor device, including: forming a metallic layer and an interlayer insulation film on a semiconductor substrate sequentially; etching on the interlayer insulation film using fluorine-based etching gas to form an opening portion of a predetermined pattern, reaching the metallic layer; and supplying chlorine-based silane gas and discharging, thus forming a Si film at least on an internal surface of the opening portion without exposure to the atmosphere after the etching.
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