发明名称 |
MOM capacitors integrated with air-gaps |
摘要 |
An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the first metallization layer; a second metallization layer over the first metallization layer; second metal features in the second metallization layer, wherein the first and the second metal features are non-capacitor features; a MOM capacitor having an area in at least one of the first and the second metallization layers; and an air-gap in the first metallization layer and between the first metal features.
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申请公布号 |
US8053865(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20080045547 |
申请日期 |
2008.03.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHUNG-LONG;YEH MING-SHIH;CHEN CHIA-YI;LU DAVID DING-CHUNG |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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