| 摘要 |
A semiconductor assembly includes a substrate with at least a CMOS region and a seal ring region and an optional micro electro mechanical system (MEMS) region, a shallow trench isolation disposed in the CMOS region of the substrate, an optional micro electro mechanical system device disposed in the micro electro mechanical system region, a plurality of recesses disposed in the seal ring region of the substrate, a first metal-oxide semiconductor disposed in the CMOS region, a dielectric layer disposed on the substrate and on the recesses, and a seal ring disposed in the seal ring region and embedded in the dielectric layer to cover and fill up the recesses, wherein the seal ring region surrounds at least the CMOS region and the optional MEMS region.
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