发明名称 Method of detecting defects of patterns on a semiconductor substrate and apparatus for performing the same
摘要 In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.
申请公布号 US8055056(B2) 申请公布日期 2011.11.08
申请号 US20070934972 申请日期 2007.11.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JONG-AN;YANG YU-SIN;JUN CHUNG-SAM;KANG MOON-SHIK;KIM JI-HYE
分类号 G06K9/00;G01N21/00 主分类号 G06K9/00
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