发明名称 |
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen |
摘要 |
The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.
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申请公布号 |
US8053311(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20100879169 |
申请日期 |
2010.09.10 |
申请人 |
CANON ANELVA CORPORATION |
发明人 |
NAKAGAWA TAKASHI;KITANO NAOMU;TATSUMI TORU |
分类号 |
H01L21/8242;H01L21/31;H01L21/336;H01L21/469 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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