发明名称 |
Methods of selective deposition of fine particles onto selected regions of a substrate |
摘要 |
A method for depositing fine particles from a suspension on selected regions of a substrate is disclosed. The particles are deposited on selected regions of a clean hydrophobic semiconductor surface that are surrounded by a wetting boundary which includes a mesa formed by etching through a silicon-on-insulator (SOI) film and an underlying buried oxide of an SOI substrate. The process is well suited for the growth of semiconductor nanowires that nucleates from fine particle used as a catalyst.
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申请公布号 |
US8053328(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20090352290 |
申请日期 |
2009.01.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN GUY MOSHE |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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