发明名称 Isolation structure for protecting dielectric layers from degradation
摘要 An integrated circuit structure includes a semiconductor substrate; and an interconnect structure overlying the semiconductor substrate. A solid metal ring is formed in the interconnect structure, with substantially no active circuit being inside the solid metal ring. The integrated circuit structure further includes a through-silicon via (TSV) having a portion encircled by the solid metal ring. The TSV extends through the interconnect structure into the semiconductor substrate.
申请公布号 US8053902(B2) 申请公布日期 2011.11.08
申请号 US20080326550 申请日期 2008.12.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN MING-FA;LIN SHENG-YUAN
分类号 H01L23/12;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/12
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