发明名称 |
Isolation structure for protecting dielectric layers from degradation |
摘要 |
An integrated circuit structure includes a semiconductor substrate; and an interconnect structure overlying the semiconductor substrate. A solid metal ring is formed in the interconnect structure, with substantially no active circuit being inside the solid metal ring. The integrated circuit structure further includes a through-silicon via (TSV) having a portion encircled by the solid metal ring. The TSV extends through the interconnect structure into the semiconductor substrate.
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申请公布号 |
US8053902(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20080326550 |
申请日期 |
2008.12.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN MING-FA;LIN SHENG-YUAN |
分类号 |
H01L23/12;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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