发明名称 |
METHOD FOR CORRECTING CRITICAL DIMENSION OF CONTACT HOLE PATTERN |
摘要 |
<p>PURPOSE: A critical dimension(CD) correcting method of a contact hole pattern is provided to analyze the CD of a random contact hole, thereby effectively correcting a CD error of a random contact hole pattern. CONSTITUTION: An original layout of a contact hole pattern is designed(110). The critical dimension(CD) of the contact hole pattern transferred on a wafer is floated by being measured(130). A contact hole in a region where a correction is required is selected(140). A GDS(Graphic Data System) image clip near a measurement hole is made(150). The GDS image clips are compared and matched in order to be grouped for similar hole types(160). CD errors are corrected for each classified group(170).</p> |
申请公布号 |
KR20110121462(A) |
申请公布日期 |
2011.11.07 |
申请号 |
KR20100041062 |
申请日期 |
2010.04.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, TAE HYEONG;YOO, GYUN |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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