发明名称 AN ETCHING SOLUTION COMPOSITION FOR METAL LAYER COMPRISING COPPER AND TITANIUM
摘要 PURPOSE: An etching composition for metal layer including copper and titanium is provided to rapidly etch copper even though the hydrogen peroxide and oxone are not included. CONSTITUTION: An etching composition for metal layer including copper and titanium comprises persulfate 5~20 weight%, fluorine containing compound 0.01~2 A weight%, inorganic acid salt and their mixture over one kind rest selected between the inorganic acid 1~10 weight%, ring-shaped amine compound 0.3~5 weight%, chlorine compound 0.1~5 weight%, p-toluene sulfonic acid 0.1~5 weight%, and the water. The persulfate is selected in the group consisting of the ammonium persulfate, persulfate minor and the potassium persulphate.
申请公布号 KR20110121121(A) 申请公布日期 2011.11.07
申请号 KR20100040568 申请日期 2010.04.30
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 LIM, MIN KI;KWON, O BYOUNG;LEE, YU JIN;YU, IN HO
分类号 C23F1/18;C23F1/30;H01L21/205 主分类号 C23F1/18
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