发明名称 |
AN ETCHING SOLUTION COMPOSITION FOR METAL LAYER COMPRISING COPPER AND TITANIUM |
摘要 |
PURPOSE: An etching composition for metal layer including copper and titanium is provided to rapidly etch copper even though the hydrogen peroxide and oxone are not included. CONSTITUTION: An etching composition for metal layer including copper and titanium comprises persulfate 5~20 weight%, fluorine containing compound 0.01~2 A weight%, inorganic acid salt and their mixture over one kind rest selected between the inorganic acid 1~10 weight%, ring-shaped amine compound 0.3~5 weight%, chlorine compound 0.1~5 weight%, p-toluene sulfonic acid 0.1~5 weight%, and the water. The persulfate is selected in the group consisting of the ammonium persulfate, persulfate minor and the potassium persulphate. |
申请公布号 |
KR20110121121(A) |
申请公布日期 |
2011.11.07 |
申请号 |
KR20100040568 |
申请日期 |
2010.04.30 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LIM, MIN KI;KWON, O BYOUNG;LEE, YU JIN;YU, IN HO |
分类号 |
C23F1/18;C23F1/30;H01L21/205 |
主分类号 |
C23F1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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