| 摘要 |
PURPOSE: A semiconductor device formation method which includes a device separation layer is provided to suppress the silicon consumption of an active area, thereby suppressing deterioration in a hot electron induced punch-through(HEIP) property of a PMOS(P-channel Metal-Oxide-Semiconductor) transistor. CONSTITUTION: A device separation trench(101) establishing an active area is arranged in a semiconductor substrate. A thermal oxide layer(310) is arranged by thermally oxidizing the floor and lateral wall of the trench. A tetra-ethyl-ortho-silicate(TEOS) layer is evaporated on a thermal oxide layer. A liner layer including the thermal oxide layer, the TEOS layer, a silicon nitride layer, and a silicon oxide layer is arranged by successively evaporating the silicon nitride layer and silicon oxide layer on the TEOS layer. A device separation layer filling the trench is arranged on the liner layer.
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